Thesis defence: Navya Sri Garigapati
Place: E-house E:1406
Contact: navya_sri [dot] garigapati [at] eit [dot] lth [dot] se
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III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are designed, fabricated, and characterized. Various spacer technologies, from high dielectric spacers to air spacers, are implemented to reduce parasitic capacitances, and fT/fmax are evaluated. Three types of RF MOSFETs with different spacer technologies are fabricated in this work.
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